Electronic Components Datasheet Search |
|
TPIC5302D Datasheet(PDF) 2 Page - Texas Instruments |
|
TPIC5302D Datasheet(HTML) 2 Page - Texas Instruments |
2 / 12 page TPIC5302 3CHANNEL INDEPENDENT POWER DMOS ARRAY SLIS029B − APRIL 1994 − REVISED SEPTEMBER 1995 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 2 electrical characteristics, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 60 V VGS(th) Gate-to-source threshold voltage ID = 1 mA, VDS = VGS 1.5 1.85 2.2 V V(BR) Reverse drain-to-GND breakdown voltage (across D1, D2, and D3) Drain-to-GND current = 250 µA 100 V VDS(on) Drain-to-source on-state voltage ID = 1.4 A, See Notes 2 and 3 VGS = 10 V, 0.42 0.49 V VF(SD) Forward on-state voltage, source-to-drain IS = 1.4 A, VGS = 0 (Z1, Z2, Z3), See Notes 2 and 3 0.9 1.1 V VF Forward on-state voltage, GND-to-drain ID = 1.4 A 4.8 V IDSS Zero-gate-voltage drain current VDS = 48 V, TC = 25°C 0.05 1 A IDSS Zero-gate-voltage drain current VDS = 48 V, VGS = 0 TC = 125°C 0.5 10 µA IGSSF Forward gate current, drain short circuited to source VGS = 16 V, VDS = 0 10 100 nA IGSSR Reverse gate current, drain short circuited to source VSG = 16 V, VDS = 0 10 100 nA Ilkg Leakage current, drain-to-GND VR = 48 V TC = 25°C 0.05 1 A Ilkg Leakage current, drain-to-GND VR = 48 V TC = 125°C 0.5 10 µA rDS(on) Static drain-to-source on-state resistance VGS = 10 V, ID = 1.4 A, TC = 25°C 0.3 0.35 Ω rDS(on) Static drain-to-source on-state resistance ID = 1.4 A, See Notes 2 and 3 and Figures 6 and 7 TC = 125°C 0.41 0.5 Ω gfs Forward transconductance VDS = 10 V, See Notes 2 and 3 ID = 0.7 A, 1.15 1.41 S Ciss Short-circuit input capacitance, common source 135 170 Coss Short-circuit output capacitance, common source VDS = 25 V, f = 1 MHz VGS = 0, 80 100 pF Crss Short-circuit reverse-transfer capacitance, common source VDS = 25 V, f = 1 MHz VGS = 0, 30 40 pF NOTES: 2. Technique should limit TJ − TC to 10°C maximum and pulse duration ≤ 5 ms. 3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. source-to-drain diode characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT trr(SD) Reverse-recovery time IS = 0.5 A, VGS = 0, VDS = 48 V, 35 ns QRR Total diode charge IS = 0.5 A, VGS = 0, di/dt = 100 A / µs, VDS = 48 V, See Figure 1 0.04 µC GND-to-drain diode characteristics, TC = 25°C (see schematic, D1, D2, and D3) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT trr Reverse-recovery time IF = 0.5 A, VDS = 48 V, 130 ns QRR Total diode charge IF = 0.5 A, di/dt = 100 A / µs, VDS = 48 V, See Figure 1 0.4 µC |
Similar Part No. - TPIC5302D |
|
Similar Description - TPIC5302D |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |