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CM400E2G-130H Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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CM400E2G-130H Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 8 page  MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE 3 th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES PERFORMANCE CURVES HVM-1048-B 5 of 8 OUTPUT CHARACTERISTICS (TYPICAL) 0 200 400 600 800 0 1 23 45 6 78 Collector - Emitter Voltage [V] VGE = 8V VGE = 10V VGE = 15V VGE = 12V Tj = 125°C VGE = 20V TRANSFER CHARACTERISTICS (TYPICAL) 0 200 400 600 800 024 68 10 12 Gate - Emitter Voltage [V] Tj = 25°C VCE = VGE Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 200 400 600 800 024 68 Collector-Emitter Saturation Voltage [V] VGE = 15V Tj = 125°C Tj = 25°C FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 200 400 600 800 024 68 Emitter-Collector Voltage [V] Tj = 25°C Tj = 125°C |
Similar Part No. - CM400E2G-130H |
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Similar Description - CM400E2G-130H |
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