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CM1200DC-34N Datasheet(PDF) 6 Page - Powerex Power Semiconductors |
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CM1200DC-34N Datasheet(HTML) 6 Page - Powerex Power Semiconductors |
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6 / 6 page  CM1200DC-34N Dual IGBTMOD™ HVIGBT Module 1200 Amperes/1700 Volts Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 6 12/12 Rev. 2 COLLECTOR CURRENT, I C, (AMPERES) 1200 1000 800 0 400 800 1200 1600 2000 600 400 200 0 VCC = 850V VGE = ±15V RG(on) = 1.3Ω RG(off) = 3.3Ω Tj = 125°C Inductive Load 2400 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) Eon Eoff Erec GATE RESISTANCE, R G, ( ) TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 1.2 1.0 10-1 100 101 10-2 10-3 0.8 0.4 0.2 0.6 0 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.019°C/W (IGBT) Rth(j-c) = 0.042°C/W (FWDi) 2000 1200 1600 800 02 46 810 400 0 VCC = 850V IC = 1200A VGE = ±15V Tj = 125°C Inductive Load 12 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) Eon Eoff Erec |
Similar Part No. - CM1200DC-34N |
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Similar Description - CM1200DC-34N |
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