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FAN54042 Datasheet(PDF) 7 Page - Fairchild Semiconductor |
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FAN54042 Datasheet(HTML) 7 Page - Fairchild Semiconductor |
7 / 41 page © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN54040 – FAN54047 • Rev. 1.0.2 7 Electrical Specifications (Continued) Unless otherwise specified: according to the circuit of Figure 1; recommended operating temperature range for TJ and TA; VBUS=5.0 V; HZ_MODE; OPA_MODE=0; (Charge Mode); SCL, SDA=0 or 1.8 V; and typical values are for TJ=25°C. Symbol Parameter Conditions Min. Typ. Max. Unit Input Power Source Detection T1 T1 (0°C) Temperature Threshold 71.9 73.9 75.9 % of VREF T2 T1 (10°C) Temperature Threshold 62.6 64.6 66.6 T3 T1 (45°C) Temperature Threshold 31.9 32.9 34.9 T4 T1 (60°C) Temperature Threshold 21.3 23.3 25.3 Input Power Source Detection VIN(MIN)1 VBUS Input Voltage Rising To Initiate and Pass VBUS Validation 4.29 4.42 V VIN(MIN)2 Minimum VBUS during Charge During Charging 3.71 3.94 V tVBUS_VALID VBUS Validation Time 30 ms VBUS Control Loop VBUSLIM VBUS Loop Setpoint Accuracy –3 +3 % Input Current Limit IBUSLIM Charger Input Current Limit Threshold IBUSLIM Set to 100 mA 88 93 98 mA IBUSLIM Set to 500 mA 450 475 500 VREF Bias Generator VREF Bias Regulator Voltage VBUS > VIN(MIN) 1.8 V Short-Circuit Current Limit 2.5 mA Battery Recharge Threshold VRCH Recharge Threshold Below V(OREG) 100 120 150 mV Deglitch Time VBAT Falling Below VRCH Threshold 130 ms STAT, POK_B Output VSTAT(OL) STAT Output Low ISTAT=10 mA 0.4 V ISTAT(OH) STAT High Leakage Current VSTAT=5 V 1 A Battery Detection IDETECT Battery Detection Current before Charge Done (Sink Current) (5) Begins after Termination Detected and VBAT < VOREG –VRCH –0.8 mA tDETECT Battery Detection Time 262 ms Sleep Comparator VSLP Sleep-Mode Entry Threshold, VBUS – VBAT 2.3 V < VBAT < VOREG, VBUS Falling 0 0.04 0.10 V Power Switches (see Figure 2) RDS(ON) Q3 On Resistance (VBUS to PMID) IIN(LIMIT)=500 mA 180 250 m Ω Q1 On Resistance (PMID to SW) 130 225 Q2 On Resistance (SW to GND) 150 225 Q4 On Resistance (SYS to VBAT) VBAT=4.2 V 70 100 m Ω ISYNC Synchronous to Non-Synchronous Current Cut-Off Threshold (6) Low-Side MOSFET (Q2) Cycle-by- Cycle Current Limit 140 mA Continued on the following page… |
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