1

Power MOSFET

IRFR420A, IRFU420A, SiHFR420A,

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

500

3.0

17

4.3

8.5

Configuration

Single

N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free

IRFR420APbF

IRFR420ATRLPbF

IRFU420APbF

SiHFR420A-E3

SiHFR420ATL-E3

SiHFU420A-E3

SnPb

IRFR420A

-

-

IRFU420A

SiHFR420A

-

-

SiHFU420A

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

3.3

A

2.1

10

Linear Derating Factor

0.67

W/°C

140

mJ

2.5

A

5.0

mJ

Maximum Power Dissipation

83

W

dV/dt

3.4

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

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