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SIHFR420A Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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SIHFR420A Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 7 page 1 Power MOSFET IRFR420A, IRFU420A, SiHFR420A, FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 45 mH, RG = 25 Ω, IAS = 2.5 A (see fig. 12). c. ISD ≤ 2.5 A, dI/dt ≤ 270 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR420APbF IRFR420ATRPbFa IRFR420ATRLPbF IRFU420APbF SiHFR420A-E3 SiHFR420AT-E3a SiHFR420ATL-E3 SiHFU420A-E3 SnPb IRFR420A - - IRFU420A SiHFR420A - - SiHFU420A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 3.3 A TC = 100 °C 2.1 Pulsed Drain Currenta IDM 10 Linear Derating Factor 0.67 W/°C Single Pulse Avalanche Energyb EAS 140 mJ Repetitive Avalanche Currenta IAR 2.5 A Repetitive Avalanche Energya EAR 5.0 mJ Maximum Power Dissipation TC = 25 °C PD 83 W Peak Diode Recovery dV/dtc dV/dt 3.4 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d www.kersemi.com |
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