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IRFR9110 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd.

Part # IRFR9110
Description  Dynamic dV/dt Rating
Download  7 Pages
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Manufacturer  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRFR9110 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9110/SiHFR9110)
• Straight Lead (IRFU9110/SiHFU9110)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU Series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 21 mH, RG = 25 Ω, IAS = - 3.1 A (see fig. 12).
c. ISD ≤ - 4.0 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V)
- 100
RDS(on) (Ω)VGS = - 10 V
1.2
Qg (Max.) (nC)
8.7
Qgs (nC)
2.2
Qgd (nC)
4.1
Configuration
Single
S
G
D
P-Channel MOSFET
DPAK
(TO-252)
IPAK
(TO-251)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
Lead (Pb)-free
IRFR9110PbF
IRFR9110TRLPbFa
IRFR9110TRPbFa
IRFU9110PbF
SiHFR9110-E3
SiHFR9110TL-E3a
SiHFR9110T-E3a
SiHFU9110-E3
SnPb
IRFR9110
IRFR9110TRLa
IRFR9110TRa
IRFU9110
SiHFR9110
SiHFR9110TLa
SiHFR9110Ta
SiHFU9110
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 100
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
ID
- 3.1
A
TC = 100 °C
- 2.0
Pulsed Drain Currenta
IDM
- 12
Linear Derating Factor
0.20
W/°C
Linear Derating Factor (PCB Mount)e
0.020
Single Pulse Avalanche Energyb
EAS
140
mJ
Repetitive Avalanche Currenta
IAR
- 3.1
A
Repetitive Avalanche Energya
EAR
2.5
mJ
Maximum Power Dissipation
TC = 25 °C
PD
25
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
2.5
Peak Diode Recovery dV/dtc
dV/dt
- 5.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
260d


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