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SI4450DY Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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SI4450DY Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 27 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 22.5 4 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -4.5 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 8 A VGS = 10 V, ID = 8 A, TJ = 125 °C VGS = 6 V, ID = 7.5 A 0.017 0.027 0.019 0.020 0.032 0.025 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 25 A gFS Forward Transconductance VDS = 5 V, ID = 8 A 28 mS Dynamic Characteristics Ciss Input Capacitance 1850 pF Coss Output Capacitance 290 pF Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0 V f = 1.0 MHz 100 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 13 24 ns tr Turn-On Rise Time 8 16 ns td(off) Turn-Off Delay Time 16 26 ns tf Turn-Off Fall Time VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6 Ω 32 50 ns Qg Total Gate Charge 30 42 nC Qgs Gate-Source Charge 8.5 nC Qgd Gate-Drain Charge VDS = 15 V, ID = 8 A VGS = 10 V, 5.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 2.1 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V Notes: 1: RθJAis the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 50° C/W when mounted on a 0.5 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.02 in2 pad of 2 oz. copper. c) 125° C/W when mounted on a minimum pad. Si4450DY Rev A Electrical Characteristics Symbol Parameter Test Conditions Min Typ Max Units T = 25°C unless otherwise noted A |
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