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THS7314DR Datasheet(PDF) 2 Page - Texas Instruments

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Part # THS7314DR
Description  3-Channel SDTV Video Amplifier With 5th-Order Filters and 6-dB Gain
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

THS7314DR Datasheet(HTML) 2 Page - Texas Instruments

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THS7314
SLOS513A
– DECEMBER 2006 – REVISED MARCH 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGING/ORDERING INFORMATION
PACKAGED DEVICES
PACKAGE TYPE(1)
TRANSPORT MEDIA, QUANTITY
THS7314D
Rails, 75
SOIC-8
THS7314DR
Tape and Reel, 2500
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
VALUE
UNIT
Supply voltage, VS+ to GND
5.5
V
VI
Input voltage
–0.4 V to VS+
IO
Output current
90
mA
Continuous power dissipation
See Dissipation Rating Table
TJ
Maximum junction temperature, any condition(2)
150
°C
TJ
Maximum junction temperature, continuous operation, long term reliability(3)
125
°C
Tstg
Storage temperature range
–65 to 150
°C
HBM
2000
ESD ratings
CDM
1500
V
MM
200
(1)
Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute maximum rated conditions for extended periods may degrade device reliability.
(2)
The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3)
The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
DISSIPATION RATINGS
POWER RATING(1)
θJC
θJA
(TJ = 125°C)
PACKAGE
(
°C/W)
(
°C/W)
TA = 25°C
TA = 85°C
SOIC-8 (D)
50
130(2)
769 mW
308 mW
(1)
Power rating is determined with a junction temperature of 125
°C. This is the point where performance starts to degrade and long-term
reliability starts to be reduced. Thermal management of the final PCB should strive to keep the junction temperature at or below 125
°C
for best performance and reliability.
(2)
This data was taken with the JEDEC High-K test PCB. For the JEDEC low-K test PCB, the
θJA is 196°C/W.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
VS+
Supply voltage
3
5
V
TA
Ambient temperature
–40
85
°C
2
Submit Documentation Feedback
© 2006–2011, Texas Instruments Incorporated
Product Folder Link(s) :THS7314


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