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THS7314DR Datasheet(PDF) 2 Page - Texas Instruments |
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THS7314DR Datasheet(HTML) 2 Page - Texas Instruments |
2 / 31 page THS7314 SLOS513A – DECEMBER 2006 – REVISED MARCH 2011 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGING/ORDERING INFORMATION PACKAGED DEVICES PACKAGE TYPE(1) TRANSPORT MEDIA, QUANTITY THS7314D Rails, 75 SOIC-8 THS7314DR Tape and Reel, 2500 (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) VALUE UNIT Supply voltage, VS+ to GND 5.5 V VI Input voltage –0.4 V to VS+ IO Output current 90 mA Continuous power dissipation See Dissipation Rating Table TJ Maximum junction temperature, any condition(2) 150 °C TJ Maximum junction temperature, continuous operation, long term reliability(3) 125 °C Tstg Storage temperature range –65 to 150 °C HBM 2000 ESD ratings CDM 1500 V MM 200 (1) Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute maximum rated conditions for extended periods may degrade device reliability. (2) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process. (3) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. DISSIPATION RATINGS POWER RATING(1) θJC θJA (TJ = 125°C) PACKAGE ( °C/W) ( °C/W) TA = 25°C TA = 85°C SOIC-8 (D) 50 130(2) 769 mW 308 mW (1) Power rating is determined with a junction temperature of 125 °C. This is the point where performance starts to degrade and long-term reliability starts to be reduced. Thermal management of the final PCB should strive to keep the junction temperature at or below 125 °C for best performance and reliability. (2) This data was taken with the JEDEC High-K test PCB. For the JEDEC low-K test PCB, the θJA is 196°C/W. RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT VS+ Supply voltage 3 5 V TA Ambient temperature –40 85 °C 2 Submit Documentation Feedback © 2006–2011, Texas Instruments Incorporated Product Folder Link(s) :THS7314 |
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