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SI4835DY Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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SI4835DY Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page Si4835DY Rev. A Typical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -8.8A VGS = -10V 0 10 20 30 40 50 12 34 56 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC V DS = -5V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 1020 304050 -ID, DIRAIN CURRENT (A) VGS = -4.0V -5.0V -6.0V -7.0V -8.0V -10V -4.5V 0 0.01 0.02 0.03 0.04 0.05 0.06 3456789 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -4.4A TA = 125 oC TA = 25 oC 0 10 20 30 40 50 012 345 -VDS, DRAIN-SOURCE VOLTAGE (V) -6.0V -5.0V -4.5V -4.0V -3.5V -7.0V VGS = -10V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25 oC -55 oC |
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