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IRF6644PBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRF6644PBF
Description  Ideal for High Performance Isolated Converter Primary Switch Socket
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6644PBF Datasheet(HTML) 1 Page - International Rectifier

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www.irf.com
1
8/18/06
DirectFET
™ Power MOSFET ‚
DirectFET
™ ISOMETRIC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical On-Resistance Vs. Drain Current
Description
The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
220
Max.
8.3
60
82
±20
100
10.3
6.2
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
0.00
0.02
0.04
0.06
0.08
TJ = 25°C
TJ = 125°C
ID = 6.2A
0
4
8
12
16
20
ID, Drain Current (A)
9
10
11
12
13
TA= 25°C
VGS = 8.0V
VGS = 7.0V
VGS = 10V
VGS = 15V
SH
SJ
SP
MZ
MN
VDSS
VGS
RDS(on)
100V max ±20V max 10.3m
Ω@ 10V
Qg tot
Qgd
Vgs(th)
35nC
11.5nC
3.7V
PD - 97094A
IRF6644PbF
IRF6644TRPbF
l RoHS Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A.
Notes:


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