January 2001

Si4925DY

General Description

Features

Absolute Maximum Ratings

T

Symbol

Parameter

Si4925DY

Units

V

DSS

Drain-Source Voltage

-30

V

V

GSS

Gate-Source Voltage

±20

V

I

D

Drain Current - Continuous

(Note 1a)

-6

A

- Pulsed

-20

P

D

Power Dissipation for Dual Operation

2

W

Power Dissipation for Single Operation

(Note 1a)

1.6

(Note 1b)

1

(Note 1c)

0.9

T

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

78

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

40

°C/W

Si4925DY Rev.A

-6 A, -30 V. R

@ V

R

@ V

Low gate charge (14.5nC typical).

High performance trench technology for extremely low

R

High power and current handling capability.

SOT-23

SuperSOT

SOIC-16

SO-8

SOT-223

SuperSOT

These P-Channel Logic Level MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for

superior switching performance.

These devices are well suited for notebook computer

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

1

5

7

8

2

3

4

6

S1

D1

S2

G1

SO-8

D2

D2

D1

G2

pin 1

© 2001 Fairchild Semiconductor International

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