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SI4925 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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SI4925 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page January 2001 Si4925DY Dual P-Channel, Logic Level, PowerTrench® MOSFET General Description Features Absolute Maximum Ratings T A = 25 oC unless otherwise noted Symbol Parameter Si4925DY Units V DSS Drain-Source Voltage -30 V V GSS Gate-Source Voltage ±20 V I D Drain Current - Continuous (Note 1a) -6 A - Pulsed -20 P D Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T J,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Si4925DY Rev.A -6 A, -30 V. R DS(ON) = 0.032 Ω @ V GS = -10 V, R DS(ON) = 0.045 Ω @ V GS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low R DS(ON). High power and current handling capability. SOT-23 SuperSOT TM-8 SOIC-16 SO-8 SOT-223 SuperSOT TM-6 These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. 1 5 7 8 2 3 4 6 S1 D1 S2 G1 SO-8 D2 D2 D1 G2 pin 1 © 2001 Fairchild Semiconductor International 49 25 |
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