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IRF7807Z Datasheet(PDF) 1 Page - International Rectifier |
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IRF7807Z Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 7/1/05 IRF7807Z HEXFET® Power MOSFET Notes through are on page 10 Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A SO-8 VDSS RDS(on) max Qg(typ.) 30V 13.8m :@VGS = 10V 7.2nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation f W PD @TA = 70°C Power Dissipation f Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 °C/W RθJA Junction-to-Ambient f ––– 50 -55 to + 150 2.5 0.02 1.6 Max. 11 8.7 88 ± 20 30 PD - 94707A |
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