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TPS2835PWPR Datasheet(PDF) 6 Page - Texas Instruments |
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TPS2835PWPR Datasheet(HTML) 6 Page - Texas Instruments |
6 / 23 page TPS2834, TPS2835 SYNCHRONOUSBUCK MOSFET DRIVERS WITH DEADTIME CONTROL SLVS223B − NOVEMBER 1999 − REVISED AUGUST 2002 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating virtual junction temperature range, VCC = 6.5 V, ENABLE = High, CL = 3.3 nF (unless otherwise noted) (continued) output drivers PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Duty cycle < 2%, V(BOOT) – V(BOOTLO) = 4.5 V, V(HIGHDR) = 4 V 0.7 1.1 High-side sink (see Note 3) Duty cycle < 2%, tpw < 100 µs (see Note 2) V(BOOT) – V(BOOTLO) = 6.5 V, V(HIGHDR) = 5 V 1.1 1.5 A (see Note 2) V(BOOT) – V(BOOTLO) = 12 V, V(HIGHDR) = 10.5 V 2 2.4 Duty cycle < 2%, V(BOOT) – V(BOOTLO) = 4.5 V, V(HIGHDR) = 0.5V 1.2 1.4 Peak output current High-side source (see Note 3) Duty cycle < 2%, tpw < 100 µs (see Note 2) V(BOOT) – V(BOOTLO) = 6.5 V, V(HIGHDR) = 1.5 V 1.3 1.6 A current (see Note 3) (see Note 2) V(BOOT) – V(BOOTLO) = 12 V, V(HIGHDR) = 1.5 V 2.3 2.7 Duty cycle < 2%, VCC = 4.5 V, V(LOWDR) = 4 V 1.3 1.8 Low-side sink (see Note 3) Duty cycle < 2%, tpw < 100 µs (see Note 2) VCC = 6.5 V, V(LOWDR) = 5 V 2 2.5 A Low-side sink (see Note 3) tpw < 100 µs (see Note 2) VCC = 12 V, V(LOWDR) = 10.5 V 3 3.5 A Low-side source Duty cycle < 2%, VCC = 4.5 V, VLOWDR)) = 0.5V 1.4 1.7 Low-side source (see Note 3) Duty cycle < 2%, tpw < 100 µs (see Note 2) VCC = 6.5 V, V(LOWDR)) = 1.5 V 2 2.4 A (see Note 3) tpw < 100 µs (see Note 2) VCC = 12 V, V(LOWDR0) = 1.5 V 2.5 3 A V(BOOT) – V(BOOTLO) = 4.5 V, V(HIGHDR)= 0.5 V 5 High-side sink (see Note 3) V(BOOT) – V(BOOTLO) = 6.5 V, V(HIGHDR) = 0.5 V 5 Ω V(BOOT) – V(BOOTLO) = 12 V, V(HIGHDR) = 0.5 V 5 V(BOOT) – V(BOOTLO) = 4.5 V, V(HIGHDR) = 4 V 75 Output resistance High-side source (see Note 3) V(BOOT) – V(BOOTLO) = 6.5 V, V(HIGHDR)= 6 V 75 Ω resistance V(BOOT) – V(BOOTLO) = 12 V, V(HIGHDR) =11.5 V 75 V(DRV) = 4.5 V, V(LOWDR)= 0.5 V 9 Low-side sink (see Note 3) V(DRV) = 6.5 V, V(LOWDR) = 0.5 V 7.5 Ω Low-side sink (see Note 3) V(DRV) = 12 V, V(LOWDR) = 0.5 V 6 Ω V(DRV) = 4.5 V, V(LOWDR) = 4 V 75 Low-side source (see Note 3) V(DRV) = 6.5 V, V(LOWDR)= 6 V 75 Ω Low-side source (see Note 3) V(DRV) = 12 V, V(LOWDR) = 11.5 V 75 NOTES: 2: Ensured by design, not production tested. 3. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. |
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