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FQP13N50 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQP13N50 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 10 page  Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP13N50 FQPF13N50 Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 12.5 12.5 * A - Continuous (TC = 100°C) 7.9 7.9 * A IDM Drain Current - Pulsed (Note 1) 50 50 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 810 mJ IAR Avalanche Current (Note 1) 12.5 A EAR Repetitive Avalanche Energy (Note 1) 17 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 170 56 W - Derate above 25°C 1.35 0.45 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQP13N50 FQPF13N50 Unit RθJC Thermal Resistance, Junction-to-Case 0.74 2.23 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W TO-220 FQP Series G S D TO-220F FQPF Series G S D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G March 2013 FQP13N50 / FQPF13N50 N-Channel QFET MOSFET 500 V, 12.5 A, 430 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 12.5 A, 500 V, RDS(on) = 430 mΩ (Max) @VGS = 10 V, ID = 6.25 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested www.fairchildsemi.com ©20 00 Fairchild Semiconductor Corporation FQP13N50 / FQPF13N50 Rev. C0 |
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