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SI6923DQ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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SI6923DQ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  Si6923DQ Rev. A (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to25°C –16 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.6 –1.0 –1.5 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to25°C 3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –3.5 A VGS = –2.5 V, ID = –2.7 A VGS=–4.5 V, ID =–3.5A, TJ=125 °C 36 56 49 45 75 72 m Ω ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –15 A gFS Forward Transconductance VDS = –5 V, ID = –3.5A 13.2 S Dynamic Characteristics Ciss Input Capacitance 1015 pF Coss Output Capacitance 446 pF Crss Reverse Transfer Capacitance VDS = –10 V, V GS = 0 V, f = 1.0 MHz 118 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 18 32 ns td(off) Turn–Off Delay Time 34 55 ns tf Turn–Off Fall Time VDD = –5 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 34 55 ns Qg Total Gate Charge 9.7 16 nC Qgs Gate–Source Charge 2.2 nC Qgd Gate–Drain Charge VDS = –5V, ID = –3.5 A, VGS = –4.5 V 2.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.25 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.25 A (Note 2) –0.6 –1.2 V IGSSR Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA Schottky Diode Characteristics TJ=25 °C 0.6 50 µA IR Reverse Leakage VR = 20V TJ=125 °C 1 8 mA TJ=25 °C 0.48 0.55 V VF Forward Voltage IF = 1A TJ=125 °C 0.42 0.50 V CT Junction Capacitance VR = 10V 50 pF Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA is 115 °C/W for the MOSFET and 130°C/W for the Schottky Diode when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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