Electronic Components Datasheet Search |
|
TLV71325PDQNR Datasheet(PDF) 2 Page - Texas Instruments |
|
|
TLV71325PDQNR Datasheet(HTML) 2 Page - Texas Instruments |
2 / 26 page TLV713 TLV713P SBVS195D – SEPTEMBER 2012 – REVISED JULY 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION(1)(2) PRODUCT VOUT XX(X) is the nominal output voltage. For output voltages with a resolution of 100 mV, two digits are used in the ordering number; otherwise, three digits are used (for example, 28 = 2.8 V; 475 = 4.75 V). TLV713xx(x)Pyyyz P is optional; devices with P have an LDO regulator with an active output discharge. YYY is the package designator. Z is the package quantity. R is for reel (3000 pieces), T is for tape (250 pieces). (1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the device product folder on www.ti.com. (2) Output voltages from 1.0 V to 3.3 V in 50-mV increments are available. Contact the factory for details and availability. ABSOLUTE MAXIMUM RATINGS (1) At TJ = +25°C, unless otherwise noted. All voltages are with respect to GND. VALUE MIN MAX UNIT Input range, VIN –0.3 6.0 V Voltage Enable range, VEN –0.3 VIN + 0.3 V Output range, VOUT –0.3 6.0 V Current Maximum output, IOUT Internally limited Output short-circuit duration Indefinite Total power dissipation Continuous, PDISS See Thermal Information table Junction range, TJ –55 +85 °C Temperature Storage junction range, Tstg –55 +150 °C Human body model (HBM) 2000 V Electrostatic discharge (ESD) ratings Charged device model (CDM) 500 V (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute- maximum rated conditions for extended periods may affect device reliability. THERMAL INFORMATION TLV713xx TLV713xxP THERMAL METRIC(1) UNITS DQN (X2SON) DBV (SOT23) 4 PINS 5 PINS θJA Junction-to-ambient thermal resistance 255.8 213.1 θJC(top) Junction-to-case(top) thermal resistance 159.3 110.9 θJB Junction-to-board thermal resistance 208.2 97.4 °C/W ψJT Junction-to-top characterization parameter 16.2 22.0 ψJB Junction-to-board characterization parameter 208.1 78.4 θJC(bottom) Junction-to-case(bottom) thermal resistance 148.6 n/a (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 2 Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: TLV713 TLV713P |
Similar Part No. - TLV71325PDQNR |
|
Similar Description - TLV71325PDQNR |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |