MTP12N10E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0, ID = 250 µAdc)

Temperature Coefficient (positive)

V(BR)DSS

100

—

—

110

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 100 V, VGS = 0, TJ = 150°C)

IDSS

—

—

—

—

10

100

µA

Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)

IGSSF

—

—

100

nAdc

Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)

IGSSR

—

—

100

nAdc

ON CHARACTERISTICS*

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (negative)

µ

VGS(th)

2.0

—

3.0

6.0

4.0

—

Vdc

mV/

°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 6.0 Adc)

RDS(on)

—

0.125

0.16

Ohm

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 6.0 Adc, TJ = 150°C)

VDS(on)

—

—

1.5

1.4

2.4

1.92

Vdc

Forward Transconductance (VDS ≥ 15 V, ID = 6.0 A)

g

FS

4.0

5.0

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

See Figure 14

Ciss

—

600

—

pF

Reverse Transfer Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

See Figure 14

Crss

—

70

—

Output Capacitance

See Figure 14

Coss

—

230

—

SWITCHING CHARACTERISTICS (TJ = 100°C)

Turn–On Delay Time

(VDD = 50 V, ID = 12 A,

VGS = 10 V, RG = 12 Ω)

See Figure 7

td(on)

—

10

—

ns

Rise Time

(VDD = 50 V, ID = 12 A,

VGS = 10 V, RG = 12 Ω)

See Figure 7

tr

—

64

—

Turn–Off Delay Time

VGS = 10 V, RG = 12 Ω)

See Figure 7

td(off)

—

21

—

Fall Time

tf

—

30

—

Gate Charge

(VDS = 80 V, ID = 12 A,

VGS = 10 Vdc)

See Figures 5 and 6

QT

—

18

26

nC

(VDS = 80 V, ID = 12 A,

VGS = 10 Vdc)

See Figures 5 and 6

Q1

—

4.0

—

VGS = 10 Vdc)

See Figures 5 and 6

Q2

—

10

—

Q3

—

8.0

—

SOURCE–DRAIN DIODE CHARACTERISTICS*

Forward On–Voltage

(IS = 12 A, VGS = 0)

(IS = 12 A, VGS = 0, TJ = 150°C)

VSD

—

1.0

2.5

Vdc

(IS = 12 A, VGS = 0)

(IS = 12 A, VGS = 0, TJ = 150°C)

—

0.83

—

Reverse Recovery Time

(IS = 12 A, VGS = 0,

dIS/dt = 100 A/µs, VR = 50 V)

trr

—

110

—

ns

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the contact screw on tab to center of die)

″

(Measured from the drain lead 0.25

″ from package to center of die)

Ld

—

—

3.5

4.5

—

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

Ls

—

7.5

—

* Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%.