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2SJ201-Y Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SJ201-Y Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SJ201 2009-12-10 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut−off current IDSS VDS = −200 V, VGS = 0 ― ― −1.0 mA Gate leakage current IGSS VDS = 0, VGS = ±20 V ― ― ±0.5 μA Drain−source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 −200 ― ― V Gate−source cut−off voltage (Note 2) VGS (OFF) VDS = −10 V, ID = −0.1 A −0.8 ― −2.8 V Drain−source saturation voltage VDS (ON) ID = −8 A, VGS = −10 V ― −2.0 −5.0 V Forward transfer admittance |Yfs| VDS = −10 V, ID = −5 A ― 5.0 ― S Input capacitance Ciss VDS = −30 V, VGS = 0, f = 1 MHz ― 1500 ― Output capacitance Coss VDS = −30 V, VGS = 0, f = 1 MHz ― 400 ― Reverse transfer capacitance Crss VDS = −30 V, VGS = 0, f = 1 MHz ― 230 ― pF Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VGS (OFF) Classification O: −0.8 to −1.6, Y: −1.4 to −2.8 This transistor is an electrostatic-sensitive device. Please handle with caution. Marking Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2SJ201 TOSHIBA JAPAN Lot No. Note 3 Part No. (or abbreviation code) |
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