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RN4985 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN4985 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page RN4985 2007-11-01 2 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector power dissipation PC * 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Marking Equivalent Circuit (Top View) |
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