MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM5359-8UL

TECHNICAL DATA

FEATURES

HIGH POWER

BROAD BAND INTERNALLY MATCHED FET

P1dB=39.5dBm at 5.3GHz to 5.9GHz

HIGH GAIN

HERMETICALLY SEALED PACKAGE

G1dB=10.0dB at 5.3GHz to 5.9GHz

RF PERFORMANCE SPECIFICATIONS

( Ta= 25

°C )

CHARACTERISTICS

SYMBOL

CONDITIONS

UNIT

MIN.

TYP. MAX.

Output Power at 1dB

Compression Point

dBm

38.5

39.5

⎯

Power Gain at 1dB

Compression Point

dB

9.0

10.0

⎯

Drain Current

A

⎯

2.2

2.6

Gain Flatness

ΔG

dB

⎯

⎯

±0.6

Power Added Efficiency

IDSset=1.8A

%

⎯

36

⎯

3rd Order Intermodulation

Distortion

dBc

-44

-47

⎯

Drain Current

Two-Tone Test

Po= 28.5dBm

(Single Carrier Level)

A

⎯

2.0

2.6

Channel Temperature Rise

ΔTch

(VDS X IDS +Pin-P1dB)

X Rth(c-c)

°C

⎯

⎯

80

Recommended Gate Resistance(Rg) : 150

Ω (Max.)

ELECTRICAL CHARACTERISTICS

( Ta= 25

°C )

CHARACTERISTICS

SYMBOL

CONDITIONS

UNIT

MIN.

TYP.

MAX.

Transconductance

gm

mS

⎯

1800

⎯

Pinch-off Voltage

V

-1.0

-2.5

-4.0

Saturated Drain Current

A

⎯

5.2

⎯

Gate-Source Breakdown

Voltage

μA

V

-5

⎯

⎯

Thermal Resistance

Channel to Case

°C/W

⎯

2.5

3.5

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jun. 2009