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TIM5359-8 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TIM5359-8 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 8 page MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5359-8UL TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 5.3GHz to 5.9GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=10.0dB at 5.3GHz to 5.9GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25 °C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power at 1dB Compression Point P1dB dBm 38.5 39.5 ⎯ Power Gain at 1dB Compression Point G1dB dB 9.0 10.0 ⎯ Drain Current IDS1 A ⎯ 2.2 2.6 Gain Flatness ΔG dB ⎯ ⎯ ±0.6 Power Added Efficiency ηadd VDS = 10V IDSset=1.8A f = 5.3 to 5.9GHz % ⎯ 36 ⎯ 3rd Order Intermodulation Distortion IM3 dBc -44 -47 ⎯ Drain Current IDS2 Two-Tone Test Po= 28.5dBm (Single Carrier Level) A ⎯ 2.0 2.6 Channel Temperature Rise ΔTch (VDS X IDS +Pin-P1dB) X Rth(c-c) °C ⎯ ⎯ 80 Recommended Gate Resistance(Rg) : 150 Ω (Max.) ELECTRICAL CHARACTERISTICS ( Ta= 25 °C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Transconductance gm VDS= 3V IDS= 3.0A mS ⎯ 1800 ⎯ Pinch-off Voltage VGSoff VDS = 3V IDS= 30mA V -1.0 -2.5 -4.0 Saturated Drain Current IDSS VDS = 3V VGS= 0V A ⎯ 5.2 ⎯ Gate-Source Breakdown Voltage VGSO IGS= -100 μA V -5 ⎯ ⎯ Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 2.5 3.5 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2009 |
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