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2SC2240 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC2240 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC2240 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplifiers. • Low noise: NF = 4dB (typ.) RG = 100 Ω, VCE = 6 V, IC = 100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = 6 V, IC = 100 μA, f = 1 kHz • Low pulse noise: Low 1/f noise • High DC current gain: hFE = 200~700 • High breakdown voltage: VCEO = 120 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 300 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
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