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AIC1730-24CQ Datasheet(PDF) 10 Page - Analog Intergrations Corporation

Part # AIC1730-24CQ
Description  Low Noise Low Dropout, 150mA Linear Regulator
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Manufacturer  AIC [Analog Intergrations Corporation]
Direct Link  http://www.analog.com.tw
Logo AIC - Analog Intergrations Corporation

AIC1730-24CQ Datasheet(HTML) 10 Page - Analog Intergrations Corporation

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AIC1730
10
NOISE BYPASS CAPACITOR
Use a 0.1
µF bypass capacitor at BP for low
output voltage noise. Increasing the capacitance
such as 1
µF will decrease the output noise,
however,
values
above
1
µF provide no
performance
advantage
and
are
not
recommended.
POWER DISSIPATION
The maximum power dissipation of AIC1730
depends on the thermal resistance of the case
and circuit board, the temperature difference
between the die junction and ambient air, and
the rate of air flow. The rate of temperature rise is
greatly
affected
by
the
mounting
pad
configuration on the PCB, the board material,
and the ambient temperature. When the IC
mounting with good thermal conductivity is used,
the junction will be low even if the power
dissipation is great.
The power dissipation across the device is P =
IOUT (VIN-VOUT).
The maximum power dissipation is:
PMAX = (TJ-TA)/(θJB + θBA)
where
TJ-TA is the temperature difference
between the die junction and the surrounding air,
θ
JB is the thermal resistance of the package, and
θ
BA is the thermal resistance through the PCB,
copper
traces,
and
other
materials
to
the
surrounding air.
As a general rule, the lower the temperature is,
the better the reliability of the device is. So the
PCB mounting pad should provide maximum
thermal conductivity to maintain low device
temperature.
The GND pin performs the dual function of
providing an electrical connection to ground and
channeling heat away. Therefore, connecting the
GND pin to ground with a large pad or ground
plane would increase the power dissipation and
reduce the device temperature.
50
100
150
0.01
0.1
1
10
100
STABLE REGION
COUT=1µF
IOUT(mA)
50
100
150
0.01
0.1
1
10
100
STABLE REGION
COUT=2.2µF
IOUT (mA)


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