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ALD810026SCL Datasheet(PDF) 5 Page - Advanced Linear Devices |
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ALD810026SCL Datasheet(HTML) 5 Page - Advanced Linear Devices |
5 / 17 page ALD810023, ALD810024, ALD810025, Advanced Linear Devices, Inc. 5 of 17 ALD810026, ALD810027, ALD810028 Notes: 1) The SAB MOSFET Drain Source ON Current (IDS(ON)) is the maximum current available to offset the supercapacitor leakage current. 2) The Drain-Gate Source Voltage (VGS=VDS) is normally the same as the voltage across the supercapacitor. TABLE 1. SUPERCAP AUTO BALANCING (SAB™) MOSFET EQUIVALENT ON RESISTANCE AT DIFFERENT DRAIN-GATE SOURCE VOLTAGES AND DRAIN-SOURCE ON CURRENTS Drain-Gate Gate- Source SAB MOSFET DRAIN-SOURCE ON CURRENT ALD Part Threshold Voltage (V) 2 IDS(ON) (µA) 1 TA = 25°C Number Voltage Equivalent ON Vt (V) Resistance (M Ω) 0.0001 0.001 0.01 0.1 1 10 100 300 1000 3000 10000 ALD910028 2.80 VGS = VDS (V) 2.4 2.5 2.6 2.7 2.8 2.9 3.02 3.1 3.24 3.3 3.8 RDS(ON) (MΩ) 24000 2500 260 27 2.8 0.29 0.030 0.01 0.003 0.001 0.0004 ALD910027 2.70 VGS = VDS (V) 2.3 2.4 2.5 2.6 2.7 2.8 2.92 3.0 3.14 3.2 3.7 RDS(ON) (MΩ) 23000 2400 250 26 2.7 0.28 0.029 0.01 0.003 0.001 0.0004 ALD910026 2.60 VGS = VDS (V) 2.2 2.3 2.4 2.5 2.6 2.7 2.82 2.9 3.04 3.1 3.6 RDS(ON) (MΩ) 22000 2300 240 25 2.6 0.27 0.028 0.01 0.003 0.001 0.0004 ALD910025 2.50 VGS = VDS (V) 2.1 2.2 2.3 2.4 2.5 2.6 2.72 2.8 2.94 3.0 3.5 RDS(ON) (MΩ) 21000 2200 230 24 2.5 0.26 0.027 0.01 0.003 0.001 0.0004 ALD910024 2.40 VGS = VDS (V) 2.0 2.1 2.2 2.3 2.4 2.5 2.62 2.7 2.84 2.9 3.4 RDS(ON) (MΩ) 20000 2100 220 23 2.4 0.25 0.026 0.009 0.003 0.001 0.0003 ALD910023 2.30 VGS = VDS (V) 1.9 2.0 2.1 2.2 2.3 2.4 2.52 2.6 2.74 2.8 3.3 RDS(ON) (MΩ) 19000 2000 210 22 2.3 0.24 0.025 0.009 0.003 0.001 0.0003 Drain-Gate Gate- Source SAB MOSFET DRAIN-SOURCE ON CURRENT ALD Part Threshold Voltage (V) 2 IDS(ON) (µA) 1 TA = 25°C Number Voltage Equivalent ON Vt (V) Resistance (M Ω) 0.0001 0.001 0.01 0.1 1 10 100 300 1000 3000 10000 ALD810028 2.80 VGS = VDS (V) 2.4 2.5 2.6 2.7 2.8 2.9 3.04 3.14 3.32 3.62 4.22 RDS(ON) (MΩ) 24000 2500 260 27 2.8 0.29 0.030 0.01 0.003 0.001 0.0004 ALD810027 2.70 VGS = VDS (V) 2.3 2.4 2.5 2.6 2.7 2.8 2.94 3.04 3.22 3.52 4.12 RDS(ON) (MΩ) 23000 2400 250 26 2.7 0.28 0.029 0.01 0.003 0.001 0.0004 ALD810026 2.60 VGS = VDS (V) 2.2 2.3 2.4 2.5 2.6 2.7 2.84 2.94 3.12 3.42 4.02 RDS(ON) (MΩ) 22000 2300 240 25 2.6 0.27 0.028 0.01 0.003 0.001 0.0004 ALD810025 2.50 VGS = VDS (V) 2.1 2.2 2.3 2.4 2.5 2.6 2.74 2.84 3.02 3.32 3.92 RDS(ON) (MΩ) 21000 2200 230 24 2.5 0.26 0.027 0.01 0.003 0.001 0.0004 ALD810024 2.40 VGS = VDS (V) 2.0 2.1 2.2 2.3 2.4 2.5 2.64 2.74 2.92 3.22 3.82 RDS(ON) (MΩ) 20000 2100 220 23 2.4 0.25 0.026 0.009 0.003 0.001 0.0004 ALD810023 2.30 VGS = VDS (V) 1.9 2.0 2.1 2.2 2.3 2.4 2.54 2.64 2.82 3.12 3.72 RDS(ON) (MΩ) 19000 2000 210 22 2.3 0.24 0.025 0.009 0.003 0.001 0.0004 Selection of a SAB MOSFET device depends on a set of desired voltage vs. current characteristics that closely match the selected nominal bias voltage and bias currents that provide the best leakage and regulation profile of a supercap load. The Vt table, where Drain-Gate Source Voltage (VGS = VDS) gives a range of VGS = VDS bias voltages as different Vsupercap load voltages. At each VGS = VDS bias voltage, a corresponding Drain-Source ON Current (IDS(ON)) is produced by a specific SAB MOSFET, which can be viewed as the amount of current available to compensate for supercap leakage current imbalances and results in an Equivalent ON Resistance (RDS(ON))across a supercap cell. Selection of a supercap bias voltage with a SAB MOSFET IDS(ON) that corresponds to the maximum supercap leakage current would result in the best possible tradeoff between leakage current balancing and voltage regulation. |
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