ALD810023, ALD810024, ALD810025,

Advanced Linear Devices, Inc.

5 of 17

ALD810026, ALD810027, ALD810028

Notes: 1) The SAB MOSFET Drain Source ON Current (IDS(ON)) is the maximum current available to offset the supercapacitor leakage current.

2) The Drain-Gate Source Voltage (VGS=VDS) is normally the same as the voltage across the supercapacitor.

DIFFERENT DRAIN-GATE SOURCE VOLTAGES AND DRAIN-SOURCE ON CURRENTS

Drain-Gate

Gate-

Source

SAB MOSFET DRAIN-SOURCE ON CURRENT

ALD Part

Threshold

Voltage (V)

2

1

Number

Voltage

Equivalent ON

Vt (V)

Resistance (M

0.001

0.01

0.1

1

10

100

300

1000

3000

10000

ALD910028

2.80

VGS = VDS (V)

2.4

2.5

2.6

2.7

2.8

2.9

3.02

3.1

3.24

3.3

3.8

RDS(ON) (MΩ)

24000

2500

260

27

2.8

0.29

0.030

0.01

0.003

0.001

0.0004

ALD910027

2.70

VGS = VDS (V)

2.3

2.4

2.5

2.6

2.7

2.8

2.92

3.0

3.14

3.2

3.7

RDS(ON) (MΩ)

23000

2400

250

26

2.7

0.28

0.029

0.01

0.003

0.001

0.0004

ALD910026

2.60

VGS = VDS (V)

2.2

2.3

2.4

2.5

2.6

2.7

2.82

2.9

3.04

3.1

3.6

RDS(ON) (MΩ)

22000

2300

240

25

2.6

0.27

0.028

0.01

0.003

0.001

0.0004

ALD910025

2.50

VGS = VDS (V)

2.1

2.2

2.3

2.4

2.5

2.6

2.72

2.8

2.94

3.0

3.5

RDS(ON) (MΩ)

21000

2200

230

24

2.5

0.26

0.027

0.01

0.003

0.001

0.0004

ALD910024

2.40

VGS = VDS (V)

2.0

2.1

2.2

2.3

2.4

2.5

2.62

2.7

2.84

2.9

3.4

RDS(ON) (MΩ)

20000

2100

220

23

2.4

0.25

0.026

0.009

0.003

0.001

0.0003

ALD910023

2.30

VGS = VDS (V)

1.9

2.0

2.1

2.2

2.3

2.4

2.52

2.6

2.74

2.8

3.3

RDS(ON) (MΩ)

19000

2000

210

22

2.3

0.24

0.025

0.009

0.003

0.001

0.0003

Drain-Gate

Gate-

Source

SAB MOSFET DRAIN-SOURCE ON CURRENT

ALD Part

Threshold

Voltage (V)

2

1

Number

Voltage

Equivalent ON

Vt (V)

Resistance (M

0.001

0.01

0.1

1

10

100

300

1000

3000

10000

ALD810028

2.80

VGS = VDS (V)

2.4

2.5

2.6

2.7

2.8

2.9

3.04

3.14

3.32

3.62

4.22

RDS(ON) (MΩ)

24000

2500

260

27

2.8

0.29

0.030

0.01

0.003

0.001

0.0004

ALD810027

2.70

VGS = VDS (V)

2.3

2.4

2.5

2.6

2.7

2.8

2.94

3.04

3.22

3.52

4.12

RDS(ON) (MΩ)

23000

2400

250

26

2.7

0.28

0.029

0.01

0.003

0.001

0.0004

ALD810026

2.60

VGS = VDS (V)

2.2

2.3

2.4

2.5

2.6

2.7

2.84

2.94

3.12

3.42

4.02

RDS(ON) (MΩ)

22000

2300

240

25

2.6

0.27

0.028

0.01

0.003

0.001

0.0004

ALD810025

2.50

VGS = VDS (V)

2.1

2.2

2.3

2.4

2.5

2.6

2.74

2.84

3.02

3.32

3.92

RDS(ON) (MΩ)

21000

2200

230

24

2.5

0.26

0.027

0.01

0.003

0.001

0.0004

ALD810024

2.40

VGS = VDS (V)

2.0

2.1

2.2

2.3

2.4

2.5

2.64

2.74

2.92

3.22

3.82

RDS(ON) (MΩ)

20000

2100

220

23

2.4

0.25

0.026

0.009

0.003

0.001

0.0004

ALD810023

2.30

VGS = VDS (V)

1.9

2.0

2.1

2.2

2.3

2.4

2.54

2.64

2.82

3.12

3.72

RDS(ON) (MΩ)

19000

2000

210

22

2.3

0.24

0.025

0.009

0.003

0.001

0.0004

Selection of a SAB MOSFET device depends on a set of desired voltage vs. current characteristics that closely match the selected nominal bias voltage and

bias currents that provide the best leakage and regulation profile of a supercap load. The Vt table, where Drain-Gate Source Voltage (VGS = VDS) gives

a range of VGS = VDS bias voltages as different Vsupercap load voltages. At each VGS = VDS bias voltage, a corresponding Drain-Source ON Current

(IDS(ON)) is produced by a specific SAB MOSFET, which can be viewed as the amount of current available to compensate for supercap leakage current

imbalances and results in an Equivalent ON Resistance (RDS(ON))across a supercap cell. Selection of a supercap bias voltage with a SAB MOSFET

IDS(ON) that corresponds to the maximum supercap leakage current would result in the best possible tradeoff between leakage current balancing and

voltage regulation.