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SN75372DRG4 Datasheet(PDF) 8 Page - Texas Instruments |
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SN75372DRG4 Datasheet(HTML) 8 Page - Texas Instruments |
8 / 19 page SN75372 DUAL MOSFET DRIVER SLLS025A − JULY 1986 3−8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 APPLICATION INFORMATION driving power MOSFETs The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The input impedance of a FET consists of a reverse biased PN junction that can be described as a large capacitance in parallel with a very high resistance. For this reason, the commonly used open-collector driver with a pullup resistor is not satisfactory for high-speed applications. In Figure 12(a), an IRF151 power MOSFET switching an inductive load is driven by an open-collector transistor driver with a 470- Ω pullup resistor. The input capacitance (Ciss) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time due to the combination of Ciss and the pullup resistor is shown in Figure 12(b). 5 V 7 4 8 3 5 1 2 6 TLC555P 1/2 SN75447 470 Ω 48 V M t − Time − µs (b) (a) IRF151 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 Figure 13. Power MOSFET Drive Using SN75447 |
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