TMS416400, TMS416400P, TMS417400, TMS417400P

TMS426400, TMS426400P, TMS427400, TMS427400P

4194304-WORD BY 4-BIT HIGH-SPEED DRAMS

SMKS881B – MAY 1995 – REVISED AUGUST 1995

10

POST OFFICE BOX 1443

electrical characteristics over recommended ranges of supply voltage and operating free-air

conditions (unless otherwise noted) (continued)

TMS426400 / P

PARAMETER

TEST CONDITIONS†

’426400 - 60

’426400P - 60

’426400 -70

’426400P -70

’426400 - 80

’426400P - 80

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

VOH

High-level

IOH = – 2 mA

LVTTL

2.4

2.4

2.4

V

VOH

g

output voltage

IOH = – 100 µA

LVCMOS

VCC – 0.2

VCC – 0.2

VCC – 0.2

V

VOL

Low-level

IOL = 2 mA

LVTTL

0.4

0.4

0.4

V

VOL

output voltage

IOL = 100 µA

LVCMOS

0.2

0.2

0.2

V

II

Input current

(leakage)

VCC = 3.6 V,

VI = 0 V to 3.9 V,

All others = 0 V to VCC

± 10

± 10

± 10

µA

IO

Output current

(leakage)

VCC = 3.6 V,

VO = 0 V to VCC,

CAS high

± 10

± 10

± 10

µA

ICC1‡§

Read- or write-

cycle current

VCC = 3.6 V,

Minimum cycle

70

60

50

mA

Standby

VIH = 2 V (LVTTL),

After 1 memory cycle,

RAS and CAS high

1

1

1

mA

ICC2

Standby

current

VIH = VCC – 0.2 V

(LVCMOS),

’426400

500

500

500

µA

(),

After 1 memory cycle,

RAS and CAS high

’426400P

200

200

200

µA

ICC3‡§

Average

refresh current

(RAS-only

refresh

or CBR)

VCC = 3.6 V,

Minimum cycle,

RAS cycling,

CAS high (RAS-only refresh),

RAS low after CAS low (CBR)

70

60

50

mA

ICC4‡¶

Average page

current

VCC = 3.6 V,

tPC = MIN,

RAS low,

CAS cycling

60

50

40

mA

ICC6#

Self-refresh

current

CAS < 0.2 V,

RAS < 0.2 V,

Measured after tRASS min

250

250

250

µA

ICC10#

Battery

back-up

operating

current

(equivalent

refresh time is

128 ms),

CBR only

tRC = 31.25 µs,

tRAS ≤ 1 µs,

VCC – 0.2 V ≤ VIH ≤ 3.9 V,

0 V

≤ VIL ≤ 0.2 V, W and OE = VIH,

Address and data stable

350

350

350

µA

† For conditions shown as MIN / MAX, use the appropriate value specified in the timing requirements.

‡ Measured with outputs open

§ Measured with a maximum of one address change while RAS = VIL

¶ Measured with a maximum of one address change while CAS = VIH

# For TMS426400P only

PRODUCT PREVIEW information concerns products in the formative or

design phase of development. Characteristic data and other

specifications are design goals. Texas Instruments reserves the right to

change or discontinue these products without notice.