Electronic Components Datasheet Search |
|
TPS1100DRG4 Datasheet(PDF) 2 Page - Texas Instruments |
|
TPS1100DRG4 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 14 page TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 description (continued) Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages. TPS1100Y chip information This chip, when properly assembled, displays characteristics similar to the TPS1100. Thermal compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10% ALL DIMENSIONS ARE IN MILS 57 64 TPS1100Y (2) (6) (1) (3) (7) (8) (5) (4) DRAIN SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN (2) (1) (3) (4) (6) (7) (8) (5) |
Similar Part No. - TPS1100DRG4 |
|
Similar Description - TPS1100DRG4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |