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CAT1161WI-42-GT3 Datasheet(PDF) 3 Page - ON Semiconductor

Part # CAT1161WI-42-GT3
Description  Supervisory Circuits with I2C Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer (16K)null
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT1161WI-42-GT3 Datasheet(HTML) 3 Page - ON Semiconductor

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CAT1161, CAT1162
http://onsemi.com
3
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Temperature Under Bias
–55 to +125
°C
Storage Temperature
–65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−2.0 to VCC + 2.0
V
VCC with Respect to Ground
−2.0 to 7.0
V
Package Power Dissipation Capability (TA = 25°C)
1.0
W
Lead Soldering Temperature (10 sec)
300
°C
Output Short Circuit Current (Note 2)
100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is –0.5 V. During transitions, inputs may undershoot to –2.0 V for periods of less than 20 ns. Maximum
DC voltage on output pins is VCC +0.5 V, which may overshoot to VCC +2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 3. RELIABILITY CHARACTERISTICS
Symbol
Parameter
Reference Test Method
Min
Max
Units
NEND (Note 3)
Endurance
MIL−STD−883, Test Method 1033
1,000,000
Cycles/Byte
TDR (Note 3)
Data Retention
MIL−STD−883, Test Method 1008
100
Years
VZAP (Note 3)
ESD Susceptibility
MIL−STD−883, Test Method 3015
2000
Volts
ILTH (Notes 3 & 4) Latch−Up
JEDEC Standard 17
100
mA
3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from –1 V to VCC +1 V.
Table 4. D.C. OPERATING CHARACTERISTICS
VCC = 2.7 V to 6 V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC
Power Supply Current
fSCL = 100 kHz
3
mA
ISB
Standby Current
VCC = 3.3 V
40
mA
VCC = 5 V
50
mA
ILI
Input Leakage Current
VIN = GND or VCC
2
mA
ILO
Output Leakage Current
VIN = GND or VCC
10
mA
VIL
Input Low Voltage
−1
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage (SDA)
IOL = 3 mA, VCC = 3.0 V
0.4
V
Table 5. CAPACITANCE
TA = 25°C, f = 1.0 MHz, VCC = 5 V
Symbol
Test
Test Conditions
Max
Units
CI/O (Note 3)
Input/Output Capacitance (SDA)
VI/O = 0 V
8
pF
CIN (Note 3)
Input Capacitance (SCL)
VIN = 0 V
6
pF


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