NCP330

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FUNCTIONAL DESCRIPTION

Overview

The NCP330 is a high side N−channel MOSFET power

distribution switch designed to connect external voltage

directly to the system. The high side MOSFET is

automatically turned on if the Vin voltage is applied thanks

to internal pull up connected between Vin and EN pin. The

turned off is obtained by Vin removal. Due to the soft start

circuitry, NCP330 is able to limit large voltage surges.

Enable input

Enable pin is an active high. The part is off when Vin is not

present, limiting current consumption from battery to OUT

pin.

In the other side, the part is automatically turned on when

Blocking Control

The blocking control circuitry switches the bulk of the

GND externally) , the body diode limits the leakage current

is connected to IN pin and cathode is connected to OUT pin.

In operating condition, anode of the body diode is connected

to OUT pin and cathode is connected to IN pin preventing

the discharge of the power supply.

Cin Capacitor

A IN capacitor, 1

mF, at least, capacitor must be placed as

close as possible the part to be Compliant with

IEC61000−4−2(Level 4).

Cout Capacitor

Depending on the sinking current during system start up

and system turn off, a capacitor must be placed on the output.

A 1

mF is strongly recommended but can be decreased down

to 100 nF if the above two sequences are well controlled and

parasitic inductance connected on the Vout line is negligible.

APPLICATION INFORMATION

Power Dissipation

The device’s junction temperature depends on different

contributor factor such as board layout, ambient

temperature, device environment, etc... Yet, the main

contributor in term of junction temperature is the power

dissipation of the power MOSFET. Assuming this, the

power dissipation and the junction temperature in normal

mode can be calculated with the following equations:

2

= Power dissipation (W)

= Power MOSFET on resistance (

W)

= Output current (A)

= Junction temperature (

°C

= Package thermal resistance (

°C/W)

= Ambient temperature (

°C)

PCB Recommendations

The NCP330 integrates an up to 3 A rated NMOS FET,

and the PCB design rules must be respected to properly

evacuate the heat out of the silicon. The

mDFN4 PAD1 must

be connected to ground plane to increase the heat transfer if

can be decreased, allowing higher power dissipation

.

ORDERING INFORMATION

Device

Marking

Package

NCP330MUTBG

3A

mDFN4, 1.2x1.6 mm

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.