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BQ24297RGET Datasheet(PDF) 9 Page - Texas Instruments |
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BQ24297RGET Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 48 page  bq24296 bq24297 www.ti.com SLUSBP6A – SEPTEMBER 2013 – REVISED OCTOBER 2013 ELECTRICAL CHARACTERISTICS (continued) VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNITS POWER PATH MANAGEMENT Isys = 0A, BATFET (Q4) off, VBAT up to 4.2 V, VSYS_RANGE Typical system regulation voltage 3.5 4.35 V REG01[3:1]=101, VSYSMIN = 3.5 V VSYS_MIN System voltage output REG01[3:1]=101, VSYSMIN = 3.5 V 3.5 3.65 V Top reverse blocking MOSFET on- RON(RBFET) 28 41 m Ω resistance between VBUS and PMIID TJ = –40°C – 85°C 39 51 Internal top switching MOSFET on- RON(HSFET) m Ω resistance between PMID and SW TJ = -40°C – 125°C 39 58 TJ = –40°C – 85°C 61 82 Internal bottom switching MOSFET on- RON(LSFET) m Ω resistance between SW and PGND TJ = -40°C – 125°C 61 90 BATFET forward voltage in supplement VFWD BAT discharge current 10mA 30 mV mode VSYS_BAT SYS/BAT Comparator VSYS falling 70 mV VBATGD Battery good comparator rising threshold VBAT rising 3.55 V VBATGD_HYST Battery good comparator falling threshold VBAT falling 100 mV BATTERY CHARGER VBAT_REG_ACC Charge voltage regulation accuracy VBAT = 4.112V and 4.208V –0.5 0.5 % VBAT = 3.8V, ICHG = 1024mA, TJ = 25°C -4 4 % IICHG_REG_ACC Fast charge current regulation accuracy VBAT = 3.8V, ICHG = 1024mA, TJ = -20°C – 125°C -7 7 % VBAT = 3.8V, ICHG = 2112mA, TJ = -20°C – 125°C –10 10 % VBAT = 3.1V, ICHG = 104mA, REG02=03 and ICHG_20pct Charge current with 20% option on 75 175 mA REG02[0]=1 VBATLOWV Battery LOWV falling threshold Fast charge to precharge, REG04[1] = 1 2.6 2.8 2.9 V Precharge to fast charge, REG04[1] = 1 VBATLOWV_HYST Battery LOWV rising threshold 2.8 3.0 3.1 V (Typical 200mV hysteresis) IPRECHG_ACC Precharge current regulation accuracy VBAT = 2.6V, ICHG = 256mA –20 20 % ITYP_TERM_ACC Typical Termination current ITERM = 256mA, ICHG = 2048mA 265 mA ITERM_ACC Termination current accuracy ITERM = 256mA, ICHG = 2048mA –22.5 22.5 % VSHORT Battery Short Voltage VBAT falling 2.0 V VSHORT_HYST Battery Short Voltage hysteresis VBAT rising 200 mV ISHORT Battery short current VBAT<2.2V 100 mA VRECHG Recharge threshold below VBAT_REG VBAT falling, REG04[0] = 0 100 mV tRECHG Recharge deglitch time VBAT falling, REG04[0]=0 20 ms TJ = 25°C 24 28 RON_BATFET SYS-BAT MOSFET on-resistance m Ω TJ = –40°C – 125°C 24 35 INPUT VOLTAGE/CURRENT REGULATION VINDPM_REG_ACC Input voltage regulation accuracy -2 2 % USB100 85 100 mA USB150 125 150 mA USB Input current regulation limit, VBUS = IUSB_DPM 5V, current pulled from SW USB500 440 500 mA USB900 750 900 mA IADPT_DPM Input current regulation accuracy IADP=1.5A, REG00[2:0]=101 1.3 1.5 A IIN_START Input current limit during system start up VSYS<2.2V 100 mA KILIM IIN = KILIM/RILIM IINDPM = 1.5A 395 435 475 A x Ω D+/D- DETECTION (bq24297) VD+_SRC D+ voltage source 0.5 0.7 V ID+_SRC D+ connection check current source 7 14 µA ID–_SINK D– current sink 50 100 150 µA D–, switch open –1 1 µA ID_LKG Leakage current into D+/D– D+, switch open –1 1 µA VD+_LOW D+ Low comparator threshold 0.8 V Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Links: bq24296 bq24297 |
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