SI7149DP-T1-GE3 datasheet(1/9 Pages) VISHAY

Part #	SI7149DP-T1-GE3

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7149DP

New Product

Document Number: 68934

S-82620-Rev. A, 03-Nov-08

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

•TrenchFET® Power MOSFET

•

100% Rg Tested

•

100% UIS Tested

APPLICATIONS

•

Battery and Load Switching

- Notebook Computers

- Notebook Battery Packs

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

- 30

0.0052 at VGS = - 10 V

- 50d

51 nC

0.0094 at VGS = - 4.5 V

- 50d

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 65 °C/W.

d. Package limited.

e. See Solder Profile

(http://www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 25

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 50d

A

TC = 70 °C

- 50d

TA = 25 °C

- 23.7a, b

TA = 70 °C

- 18.7a, b

Pulsed Drain Current

IDM

- 70

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 50d

TA = 25 °C

- 4.3a, b

Avalanche Current

L = 0.1 mH

IAS

- 20

Single-Pulse Avalanche Energy

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

PD

69

W

TC = 70 °C

44.4

TA = 25 °C

5.2a, b

TA = 70 °C

3.3a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)e, f

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 10 s

RthJA

19

24

°C/W

Maximum Junction-to-Case

Steady State

RthJC

1.2

1.8

Ordering Information: Si7149DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

S

G

D

P-Channel MOSFET

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SI7149DP-T1-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix

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