MTP3N50E

6

Motorola TMOS Power MOSFET Transistor Device Data

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 16. Capacitance Variation

VGS

VDS

0

Ciss

1000

800

600

400

25

20

10

0

10

Figure 17. Gate Charge versus

Gate–To–Source Voltage

QG, TOTAL GATE CHARGE (nC)

16

0

0

5

12

8

4

10

15

20

25

200

Figure 18. Gate Charge Test Circuit

Vin

15 V

100 k

47 k

2N3904

2N3904

1 mA

+18 V

VDD

10 V

100 k

0.1

µF

100

FERRITE

BEAD

DUT

SAME

DEVICE TYPE

AS DUT

Vin = 15 Vpk; PULSE WIDTH ≤ 100 µs, DUTY CYCLE ≤ 10%

TJ = 25°C

VGS = 0

47 k

VDS = 100 V

250 V

5

5

15

VDS = 0

TJ = 25°C

ID = 3 A

400 V

Coss

Crss