Electronic Components Datasheet Search |
|
LF356M Datasheet(PDF) 1 Page - Texas Instruments |
|
|
LF356M Datasheet(HTML) 1 Page - Texas Instruments |
1 / 32 page LF155, LF156, LF355, LF356, LF357 www.ti.com SNOSBH0C – MAY 2000 – REVISED MARCH 2013 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers Check for Samples: LF155, LF156, LF355, LF356, LF357 1 FEATURES DESCRIPTION These are the first monolithic JFET input operational 23 Advantages amplifiers to incorporate well matched, high voltage • Replace Expensive Hybrid and Module FET Op JFETs on the same chip with standard bipolar Amps transistors ( BI-FET™ Technology). These amplifiers • Rugged JFETs Allow Blow-Out Free Handling feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset Compared with MOSFET Input Devices adjust which does not degrade drift or common-mode • Excellent for Low Noise Applications Using rejection. The devices are also designed for high slew Either High or Low Source Impedance—Very rate, wide bandwidth, extremely fast settling time, low Low 1/f Corner voltage and current noise and a low 1/f noise corner. • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Common Features Monolithic Amplifiers • Low Input Bias Current: 30pA • New Output Stage Allows Use of Large • Low Input Offset Current: 3pA Capacitive Loads (5,000 pF) without Stability • High Input Impedance: 1012 Ω Problems • Low Input Noise Current: 0.01 pA/ √Hz • Internal Compensation and Large Differential • High Common-Mode Rejection Ratio: 100 dB Input Voltage Capability • Large DC Voltage Gain: 106 dB APPLICATIONS Table 1. Uncommon Features • Precision High Speed Integrators LF155/ LF156/ LF257/ Units LF355 LF256/ LF357 • Fast D/A and A/D Converters LF356 (AV=5) • High Impedance Buffers Extremely fast 4 1.5 1.5 μs settling time to 0.01% • Wideband, Low Noise, Low Drift Amplifiers Fast slew rate 5 12 50 V/µs • Logarithmic Amplifiers Wide gain bandwidth 2.5 5 20 MHz • Photocell Amplifiers Low input noise 20 12 12 nV / √Hz • Sample and Hold Circuits voltage 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 BI-FET is a trademark of Texas Instruments. 3 All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 2000–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Similar Part No. - LF356M |
|
Similar Description - LF356M |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |