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V12WM100C-M3I Datasheet(PDF) 1 Page - Vishay Siliconix |
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V12WM100C-M3I Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page V12WM100C-M3 www.vishay.com Vishay General Semiconductor Revision: 04-Dec-13 1 Document Number: 89973 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-252 (D-PAK) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked PRIMARY CHARACTERISTICS IF(AV) 2 x 6 A VRRM 100 V IFSM 90 A VF at IF = 6 A (TA = 125 °C) 0.57 V TJ max. 150 °C Package TO-252 (D-PAK) Diode variation Dual common cathode TO-252 (D-PAK) A K HEATSINK A V12WM100C A A K TMBS ® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V12WM100C UNIT Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (fig. 1) per device IF(AV) 12 A per diode 6 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 90 A Operating junction and storage temperature range TJ, TSTG -40 to +150 °C |
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