Electronic Components Datasheet Search |
|
STP8N80K5 Datasheet(PDF) 3 Page - STMicroelectronics |
|
STP8N80K5 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 16 page DocID023544 Rev 4 3/16 STP8N80K5, STU8N80K5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage ± 30 V I D Drain current T C = 25 °C 6 A I D Drain current T C = 100 °C 4 A I DM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 24 A P TOT Total dissipation at T C = 25 °C 110 W I AR (2) 2. Pulse width limited by T Jmax. Max current during repetitive or single pulse avalanche 2A E AS (3) 3. Starting T J = 25 °C, I D =I AS , V DD = 50 V Single pulse avalanche energy (starting T J = 25 °C, I D =I AS , V DD = 50 V) 114 mJ dv/dt (4) 4. I SD ≤ 6 A, di/dt ≤ 100 A/μs, V DS(peak) ≤ V (BR)DSS Peak diode recovery voltage slope 4.5 V/ns dv/dt (5) 5. V DS ≤ 640 V MOSFET dv/dt ruggedness 50 V/ns T j T stg Operating junction temperature Storage temperature - 55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit TO-220 IPAK R thj-case Thermal resistance junction-case max. 1.14 °C/W R thj-amb Thermal resistance junction-amb max. 62.5 100 °C/W |
Similar Part No. - STP8N80K5 |
|
Similar Description - STP8N80K5 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |