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STD80N4F6 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD80N4F6 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 18 page DocID023839 Rev 3 3/18 STD80N4F6, STU80N4F6 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 80(1) 1. Current limited by package. A ID (1) Drain current (continuous) at TC = 100 °C 56(1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320(1) A PTOT Total dissipation at TC = 25 °C 70 W IAV Avalanche current, repetitive or not-repetitive (pulse width limited by TJmax) 40 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAV, VDD = 25 V) 149 mJ Derating factor 0.47 W/°C Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature °C Table 3. Thermal data Symbol Parameter Value Unit DPAK IPAK Rthj-case Thermal resistance junction-case max 2.14 °C/W Rthj-amb Thermal resistance junction-ambient max 100 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of inch2, 2 oz Cu Thermal resistance junction-ambient max 50 °C/W |
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Similar Description - STD80N4F6 |
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