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STU80N4F6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STU80N4F6 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 18 page This is information on a product in full production. March 2013 DocID023839 Rev 3 1/18 18 STD80N4F6, STU80N4F6 N-channel 40 V, 5.5 m Ω typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK and IPAK packages Datasheet −production data Figure 1. Internal schematic diagram Features • Low gate charge • Very low on-resistance • High avalanche ruggedness Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. 1 3 TAB DPAK IPAK 3 2 1 TAB Order codes VDS RDS(on) max ID STD80N4F6 40 V 6.0 m Ω 80 A STU80N4F6 6.3 m Ω Table 1. Device summary Order codes Marking Package Packaging STD80N4F6 80N4F6 DPAK Tape and reel STU80N4F6 IPAK Tube www.st.com |
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