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P82B96PN Datasheet(PDF) 6 Page - NXP Semiconductors |
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P82B96PN Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 32 page P82B96_8 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 08 — 10 November 2009 6 of 32 NXP Semiconductors P82B96 Dual bidirectional bus buffer 9. Characteristics Table 5. Characteristics Tamb = +25 °C; voltages are specified with respect to GND with VCC = 5 V, unless otherwise specified. Symbol Parameter Conditions Tamb = +25 °C Tamb = −40 °C to +125 °C[1] Unit Min Typ Max Min Max Power supply VCC supply voltage operating 2.0 - 15 2.0 15 V ICC supply current buses HIGH - 0.9 1.8 - 3 mA VCC =15V; buses HIGH - 1.1 2.5 - 4 mA ∆ICC additional quiescent supply current per Tx or Ty LOW - 1.7 3.5 - 3.5 mA Bus pull-up (load) voltages and currents VSx, VSy maximum input/output voltage open-collector; I2C-bus and VRx,VRy = HIGH -- 15 - 15 V ISx, ISy static output loading on I2C-bus VSx, VSy = 1.0 V; VRx,VRy =LOW [2] 0.2 - 3 0.2 3 mA ISx, ISy dynamic output sink capability on I2C-bus VSx, VSy =2V; VRx,VRy =LOW 718 - 7 - mA ISx, ISy leakage current on I2C-bus VSx, VSy =5V; VRx,VRy = HIGH -- 1 - 10 µA VSx, VSy =15V; VRx,VRy = HIGH -1- - 10 µA VTx, VTy maximum output voltage level open-collector - - 15 - 15 V ITx, ITy static output loading on buffered bus VTx, VTy = 0.4 V; VSx,VSy = LOW on I2C-bus = 0.4 V - - 30 - 30 mA ITx, ITy dynamic output sink capability, buffered bus VTx, VTy >1V; VSx,VSy = LOW on I2C-bus = 0.4 V 60 100 - 60 - mA ITx, ITy leakage current on buffered bus VTx, VTy =VCC =15V; VSx, VSy = HIGH -1- - 10 µA Input currents ISx, ISy input current from I2C-bus bus LOW; VRx,VRy = HIGH - −1- - −10 µA IRx, IRy input current from buffered bus bus LOW; VRx,VRy = 0.4 V - −1- - −10 µA IRx, IRy leakage current on buffered bus input VRx, VRy =VCC -1- - 10 µA Output logic LOW level VSx, VSy output logic level LOW on normal I2C-bus ISx, ISy =3mA [3] 0.8 0.88 1.0 (see Figure 6)V ISx, ISy = 0.2 mA [3] 670 730 790 (see Figure 5)mV dVSx/dT, dVSy/dT temperature coefficient of output LOW levels ISx, ISy = 0.2 mA [3] - −1.8 - - - mV/K |
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