CMZB12~CMZB53

2013-11-01

1

TOSHIBA Zener Diode Silicon Diffused Type

CMZB12~CMZB53

○

Communication, Control and

Measurement Equipment

○

Constant Voltage Regulation

○

Transient Suppressors

• Average power dissipation: P = 1.0 W

• Suitable for high-density board assembly due to the use of a small

Characteristics

Symbol

Rating

Unit

Power dissipation

P

1.0 (Note 1)

W

Junction temperature

−40 to 150

°C

Storage temperature range

−40 to 150

°C

Note 1: Ta

= 40°C

Device mounted on a glass-epoxy board

Board size: 50 mm

× 50 mm

Soldering size: 6 mm

× 6 mm

Board thickness: 1.6 mm

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating temperature / current /

voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

①

ANODE

②

CATHODE

0.16

1.75

± 0.1

+ 0.2

− 0.1

2.4

①

②

JEDEC

―

JEITA

―

TOSHIBA

3-4E1A

Weight: 0.023 g (typ.)

Start of commercial production

2005-09