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TISP7072F3 Datasheet(PDF) 3 Page - Bourns Electronic Solutions |
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TISP7072F3 Datasheet(HTML) 3 Page - Bourns Electronic Solutions |
3 / 15 page MARCH 1994 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Electrical Characteristics for all Terminal Pairs, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off- state current VD =VDRM, 0 °C< TA <70 °C ±10 µA V(BO) Breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300 Ω ‘7072F3 ‘7082F3 ±72 ±82 V V(BO) Impulse breakover voltage dv/dt ≤ ±1000 V/µs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ±10 A ‘7072F3 ‘7082F3 ±90 ±100 V I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 Ω ±0.1 ±0.8 A VT On-state voltage IT = ±5A, tW = 100 µs ±5V IH Holding current IT = ±5A, di/dt= - /+30mA/ms ±0.15 A dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs ID Off-state current VD = ±50 V ±10 µA Coff Off-state capacitance f= 1 MHz, Vd =1 V rms, VD =0 f= 1 MHz, Vd =1 V rms, VD =-1 V f= 1 MHz, Vd =1 V rms, VD =-2 V f= 1 MHz, Vd =1 V rms, VD =-5 V f= 1 MHz, Vd =1 V rms, VD =-50 V f= 1 MHz, Vd =1 V rms, VDTR =0 (see Note 4) 53 56 51 43 25 29 69 73 66 56 33 37 pF NOTE 4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias VD, are for the R-G and T-G terminals only. The last capacitance value, with bias VDTR, is for the T-R terminals. Thermal Characteristics TISP70xxF3 (LV) Overvoltage Protector Series Parameter Test Conditions Min Typ Max Unit RθJA Junction to free air thermal resistance Ptot =0.8 W, TA = 25 C 5cm2, FR4 PCB 160 C/W ° ° |
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