APRIL 2013 - REVISED NOVEMBER 2013

Specifications are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

Users should verify actual device performance in their specific applications.

TISP9110MDM Overvoltage Protector

TISP9110MDM

INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS

FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION

Device Symbol

High Performance Protection for SLICs with +ve and -ve

Battery Supplies

– Wide -110 V to +110 V Programming Range

– Low 5 mA max. Gate Triggering Current

– Dynamic Protection Performance Specified for

International Surge Waveshapes

Applications include:

– Wireless Local Loop

– Access Equipment

– Regenerated POTS

– VOIP Applications

Rated for International Surge Wave Shapes

How To Order

8-SOIC (210 mil) Package (Top View)

Description

The Model TISP9110MDM is a programmable overvoltage

protection device designed to protect modern dual polarity supply

rail ringing SLICs (Subscriber Line Interface Circuits) against

overvoltages on the telephone line. Overvoltages can be caused

by lightning, a.c. power contact and induction. Four separate

protection structures are used; two positive and two negative

to provide optimum protection during Metallic (Differential) and

Longitudinal (Common Mode) protection conditions in both polar-

ities. Dynamic protection performance is specified under typical

international surge waveforms from Telcordia GR-1089-CORE,

ITU-T K.44 and YD/T 950.

Wave Shape

Standard

A

2/10

GR-1089-CORE

150

10/700

ITU-T K.20/21/45

80

10/1000

GR-1089-CORE

50

MD-8SOIC(210)-003-a

NC - No internal connection

Terminal typical application names shown in

parenthesis

1

2

3

45

6

7

8

NC

Ground

Ground

NC

(-V

G1

(Tip or Ring) Line

(Ring or Tip) Line

(+V

G2

SD-TISP9-001-a

G2

G1

Ground

Line

Line

The Model TISP9110MDM is programmed by connecting the G1

incorporates 4 separate buffer transistors designed to provide independent control for each protection element. The gate buffer transistors

minimize supply regulation issues by reducing the gate current drawn to around 5 mA, while the high voltage base emitter structures eliminate

the need for expensive reverse bias protection gate diodes.

The Model TISP9110MDM is rated for common surges contained in regulatory requirements such as ITU-T K.20, K.45, Telcordia GR-1089-

can be designed to comply with modern telecom standards.

*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.

Device

Package

Carrier

Marking Code

Standard Quantity

TISP9110MDM

8-SOIC (210 mil)

Embossed Tape Reeled

TISP9110MDMR-S

9110M

2000

Order As