FEBRUARY 1999 – REVISED JULY 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP83121D Unidirectional P & N-Gate Protector

Absolute Maximum Ratings

Thermal Characteristics

Parameter

Test Conditions

Min

Typ

Max

Unit

Off-state current

1

µA

Repetitive peak off-

state current

µA

Holding current

90

60

300

mA

Reverse current

1mA

Gate G1 trigger current

+200

mA

Gate G2 trigger current

-180

mA

G1-K trigger voltage

V

G2-A trigger voltage

V

Anode-cathode off-

state capacitance

100

pF

NOTE

3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

Parameter

Test Conditions

Min

Typ

Max

Unit

Junction to free air thermal resistance

T

TSM(900)

= 25 °C, EIA/JESD51-3 PCB,

EIA/JESD51-2 environment, I = I

105

°C/W

Rating

Symbol

Value

Unit

100

V

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

A

10/1000

(GR-1089-CORE, open-circuit voltage wave shape 10/1000

150

5/310

(CCITT K20/21, open-circuit voltage wave shape 7 kV, 10/700

250

8/20 µs

µs

µs)

µs)

µs)

µs

(ANSI C62.41, open-circuit voltage wave shape 1.2/50

500

Non-repetitive peak on-state current, 50 Hz, halfwave rectified sinewave, (see Notes 1 and 2)

100 ms

1 s

900 s

22

8

3

A

Junction temperature

-40 to +150

°C

Storage temperature range

-65 to +150

°C

its initial conditions. For operation at the rated current value, pins 1, 4, 5 and 8 must be connected together.

2. Above 70 °C, derate linearly to zero at 150 °C lead temperature.