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AM29F040B-150PE Datasheet(PDF) 1 Page - Advanced Micro Devices |
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AM29F040B-150PE Datasheet(HTML) 1 Page - Advanced Micro Devices |
1 / 35 page This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 21445 Rev: E Amendment/0 Issue Date: November 29, 2000 Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device s High performance — Access times as fast as 55 ns s Low power consumption — 20 mA typical active read current — 30 mA typical program/erase current — 1 µA typical standby current (standard access time to active mode) s Flexible sector architecture — 8 uniform sectors of 64 Kbytes each — Any combination of sectors can be erased — Supports full chip erase — Sector protection: A hardware method of locking sectors to prevent any program or erase operations within that sector s Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies bytes at specified addresses s Minimum 1,000,000 program/erase cycles per sector guaranteed s 20-year data retention at 125 °C — Reliable operation for the life of the system s Package options — 32-pin PLCC, TSOP, or PDIP s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply Flash standard — Superior inadvertent write protection s Data# Polling and toggle bits — Provides a software method of detecting program or erase cycle completion s Erase Suspend/Erase Resume — Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation |
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