IKW20N60T datasheet(3/14 Pages) INFINEON

Part #	IKW20N60T

Description	IGBT in TrenchStop짰 and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Download	14 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

3 / 14 page

IKP20N60T

TrenchStop

® Series

IKW20N60T

IFAG IPC TD VLS

3

Rev. 2.6 12.06.2013

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

Value

Unit

min.

Typ.

max.

IGBT Characteristic

Turn-on delay time

t d( o n)

T j =2 5 C ,

VC C = 40 0 V, IC = 2 0 A,

VG E = 0/ 15 V ,

R G = 12  ,

L 

2 ) =131nH,

C 

2 ) =31pF

Energy losses include

“tail” and diode

reverse recovery.

-

18

-

ns

Rise time

t r

-

14

-

Turn-off delay time

t d( of f)

-

199

-

Fall time

t f

-

42

-

Turn-on energy

Eo n

-

0.31

-

mJ

Turn-off energy

Eo ff

-

0.46

-

Total switching energy

Et s

-

0.77

-

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

T j =2 5 C ,

VR = 4 00 V , IF = 2 0 A,

d iF/ d t =8 8 0 A/ s

-

41

-

ns

Diode reverse recovery charge

Q rr

-

0.31

-

µC

Diode peak reverse recovery current

I rr m

-

13.3

-

A

Diode peak rate of fall of reverse

recovery current during t b

d irr /d t

-

711

-

A/

s

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter

Symbol

Conditions

Value

Unit

min.

Typ.

max.

IGBT Characteristic

Turn-on delay time

t d( o n)

T j =1 7 5 C,

VC C = 40 0 V, IC = 2 0 A,

VG E = 0/ 15 V ,

R G = 1 2 

L 

1 ) =131nH,

C 

1 ) =31pF

Energy losses include

“tail” and diode

reverse recovery.

-

18

-

ns

Rise time

t r

-

18

-

Turn-off delay time

t d( of f)

-

223

-

Fall time

t f

-

76

-

Turn-on energy

Eo n

-

0.51

-

mJ

Turn-off energy

Eo ff

-

0.64

-

Total switching energy

Et s

-

1.15

-

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

T j =1 7 5 C

VR = 4 00 V , IF = 2 0 A,

d iF/ d t =8 8 0 A/ s

-

176

-

ns

Diode reverse recovery charge

Q rr

-

1.46

-

µC

Diode peak reverse recovery current

I rr m

-

18.9

-

A

Diode peak rate of fall of reverse

recovery current during t b

d irr /d t

-

467

-

A/

s

1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.

Similar Part No. - IKW20N60T

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IKW20N60T	435Kb / 15P	IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode Rev. 2.2 Dec-04
	IKW20N60T	454Kb / 14P	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Rev. 2.5 Sep. 08
	IKW20N60T	507Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.8 18.05.2015
	IKW20N60TA	606Kb / 13P	Designed for DC/AC converters for Automotive Application Rev. 2.2 27.08.2013
	IKW20N60T	507Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.8 18.05.2015

More results

Similar Description - IKW20N60T

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IKA06N60T	520Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.5 20.09.2013
	IKB20N60T	703Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 20.09.2013
	IKP06N60T	520Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.5 20.09.2013
	IKP20N60T	505Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.8 18.05.2015
	IKW30N60T	506Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 19.05.2015
	IKP04N60T	505Kb / 13P	IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.8 17.02.2016
	IKA15N60T	515Kb / 13P	IGBT in TRENCHSTOP??and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 25.07.2016
	IKP10N60T	458Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 11.05.2015
	IKB06N60T	658Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.5 20.09.2013
	IKW50N60T	598Kb / 13P	IGBT in TRENCHSTOP??and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 20.09.2013

More results

IKW20N60T Datasheet(PDF) 3 Page - Infineon Technologies AG

IKW20N60T Datasheet(HTML) 3 Page - Infineon Technologies AG

Similar Part No. - IKW20N60T

Similar Description - IKW20N60T

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL