2SC4207

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC4207

Audio Frequency General Purpose Amplifier Applications

• Small package (dual type)

• Complementary to 2SA1618

Characteristics

Symbol

Rating

Unit

Collector-base voltage

60

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

150

mA

Base current

30

mA

Collector power dissipation

(Note 1)

300

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3L1A

Weight: 0.014 g (typ.)