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1

5/4/11

Fig 1. Typical On-Resistance Vs. Gate Voltage

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

Notes:

IRF8308MPbF

IRF8308MTRPbF

DirectFET

™ Power MOSFET ‚

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

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Typical values (unless otherwise specified)

PD -97671

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SQ

SX

ST

MQ

MX

MT

MP

DirectFET

™ ISOMETRIC

MX

Description

the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck

including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt

immunity for synchronous FET applications.

30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

A

Pulsed Drain Current

g

Single Pulse Avalanche Energy

h

mJ

Avalanche Current

Ãg

A

21

12

Max.

21

150

212

±20

30

27

2.0

4.0

6.0

8.0

10.0

VGS, Gate-to-Source Voltage (V)

0

2

4

6

8

TJ = 25°C

TJ = 125°C

ID = 27A

0

20406080

QG Total Gate Charge (nC)

0

2

4

6

8

10

12

VDS= 24V

VDS= 15V

ID= 21A

28nC

8.2nC

3.5nC

34nC

20nC

1.8V