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STFI15N65M5 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STFI15N65M5
Description  N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFI15N65M5 Datasheet(HTML) 3 Page - STMicroelectronics

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STF15N65M5, STFI15N65M5, STP15N65M5
Electrical ratings
Doc ID 022863 Rev 2
3/17
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
I2PAKFP
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
11
11(1)
1.
Limited by maximum junction temperature.
A
ID
Drain current (continuous) at TC = 100 °C
6.9
6.9(1)
A
IDM
(1)
Drain current (pulsed)
44
44(1)
A
PTOT
Total dissipation at TC = 25 °C
85
25
W
dv/dt (2)
2.
ISD ≤ 11 A, di/dt ≤400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220FP
I2PAKFP
TO-220
Rthj-case Thermal resistance junction-case max
5
1.47
°C/W
Rthj-amb Thermal resistance junction-ambient max
62.5
°C/W
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
2.5
A
EAS
Single pulse avalanche energy (starting tj=
25°C, ID= IAR; VDD=50 V)
160
mJ


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