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74HCT1G14GW Datasheet(PDF) 8 Page - NXP Semiconductors |
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74HCT1G14GW Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 16 page 74HC_HCT1G14 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 6 — 27 December 2012 8 of 16 NXP Semiconductors 74HC1G14; 74HCT1G14 Inverting Schmitt trigger 15. Application information The slow input rise and fall times cause additional power dissipation, this can be calculated using the following formula: Padd =fi (tr ICC(AV) +tf ICC(AV)) VCC Where: Padd = additional power dissipation (W) fi = input frequency (MHz) tr = rise time (ns); 10 % to 90 % Fig 11. Typical 74HC1G14 transfer characteristics; VCC =6.0 V mna030 0 3.0 6.0 1.6 0 0.8 ICC (mA) VI (V) Fig 12. Typical 74HCT1G14 transfer characteristics; VCC =4.5 V Fig 13. Typical 74HCT1G14 transfer characteristics; VCC =5.5 V mna031 0 5.0 2.0 0 1.0 ICC (mA) 2.5 VI (V) mna032 0 3.0 2.0 1.0 0 3.0 6.0 ICC (mA) VI (V) |
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