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TPIC2603NE Datasheet(PDF) 3 Page - Texas Instruments |
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TPIC2603NE Datasheet(HTML) 3 Page - Texas Instruments |
3 / 19 page TPIC2603 6CHANNEL SERIAL INTERFACE LOW SIDE DRIVER SLIS056A − FEBRUARY 1995 − REVISED MARCH 1996 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 Terminal Functions TERMINAL I/O DESCRIPTION NAME NO.† I/O DESCRIPTION CS 8 (10) I Chip select. The CS is an active-low input used to select the serial interface of the device. The device accepts serial input data and transmits fault data when CS is held low. An internal pullup resistor is provided on the CS input. DRAIN0 DRAIN1 DRAIN2 DRAIN3 DRAIN4 DRAIN5 19 (23) 12 (14) 10 (12) 9 (11) 2 (2) 1 (1) O FET drain outputs. The DRAIN terminals are low-side switches for inductive and resistive loads. Each output provides an internal drain-gate clamp to snub inductive transients. GND 5, 6, 15, 16 (5, 6, 7, 8, 17, 18, 19, 20) O Ground. These terminals provide ground return paths for the device. SCLK 3 (3) I Serial clock. The SCLK clocks the shift register. Serial data is transferred into the SDI port and serial fault data is transferred out of the SDO port of the device on the rising edges of SCLK. SDI 4 (4) I Serial data input. The device receives serial data from the control device using the SDI. Serial input data can be configured in 8-bit or 16-bit data words. Refer to Figures 2 and 4 for input protocol. An internal pulldown resistor is provided on the SDI input. SDO 7 (9) O Serial data output. This 3-state output transfers fault data to the control device after the device has been selected by the CS terminal. Vbat 20 (24) I Battery voltage. The Vbat terminal monitors the battery voltage to detect over-voltage conditions. VCC 11 (13) I Supply voltage. The VCC terminal receives a 5-V supply for internal logic. † Terminal numbers listed in parenthesis are for the 24-pin DW package. absolute maximum ratings over the recommended operating case temperature range (unless otherwise noted)‡ Logic supply voltage range, VCC (see Note 1) −0.3 V to 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Battery supply voltage range, Vbat −1.5 V to 60 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Logic input voltage range, VI −0.3 V to 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power DMOS drain-to-source voltage, VDS (see Note 2) 68 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous drain current, each output, all outputs on, ID, TC = 25°C 350 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed drain current, single output, IDM, TC = 25°C (see Note 3) 2.25 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single-pusle avalanche energy, EAS (see Figure 11) 100 mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total power dissipation See Dissipation Rating Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Avalanche current, IAS (see Note 4) 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating virtual junction temperature range, TJ −40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −55 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ‡ Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration ≤ 100 µs and duty cycle ≤ 2%. 4. DRAIN supply voltage = 13 V, starting junction temperature (TJS) = 25°C, L = 150 mH, IAS = 1 A (see Figure 11). |
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