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N0118GA Datasheet(PDF) 6 Page - NXP Semiconductors

Part # N0118GA
Description  SCR
Download  13 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

N0118GA Datasheet(HTML) 6 Page - NXP Semiconductors

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N0118GA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 July 2011
6 of 13
NXP Semiconductors
N0118GA
SCR
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT
gate trigger current
VD =12V; IT =10mA; Tj =25°C;
see Figure 7
0.5
-
7
µA
IL
latching current
VD =12V; IG =0.1 A; Tj =25°C;
see Figure 8
--6
mA
IH
holding current
VD =12V; Tj =25°C; see Figure 9;
see Figure 10
--5
mA
VT
on-state voltage
IT = 1.6 A; Tj = 25 °C; see Figure 11
-
1.4
1.95
V
VGT
gate trigger voltage
VD =12V; IT = 0.1 A; Tj =25°C;
see Figure 12
--0.8
V
ID
off-state current
VD = 600 V; Tj =25°C; RGK =1kΩ
--10
µA
VD = 600 V; Tj =125 °C; RGK =1kΩ
-
-
100
µA
IR
reverse current
Tj =25°C; RGK =1kΩ; VR = 600 V
--10
µA
Tj =125 °C; RGK =1kΩ; VR 600 V
-
-
100
µA
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM =402 V; Tj = 125 °C; RGK =1kΩ;
exponential waveform; see Figure 13;
see Figure 14
75
--V/µs
Fig 7.
Normalized gate trigger current as a function of
junction temperature
Fig 8.
Normalized latching current as a function of
junction temperature
Tj (°C)
-50
150
100
050
003aag291
1.0
1.5
0.5
2.0
2.5
IGT
IGT(25°C)
0
Tj (°C)
-50
150
100
050
003aag292
0.8
1.2
1.6
IL
IL(25°C)
0.4


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