2013/10/18

Ver.1

Page 1

SPP2311

P-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

The SPP2311 is the

P-Channel enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology. This high density

process is especially tailored to minimize on-state

resistance and provide superior switching performance.

These devices are particularly suited for low voltage

applications

such

as

notebook

computer

power

management and other battery powered circuits where

high-side switching , low in-line power loss, and

resistance to transients are needed.



Drivers : Relays/Solenoids/Lamps/Hammers



Power Supply Converter Circuits



Load/Power Switching Cell Phones, Pagers

FEATURES

PIN CONFIGURATION( SOT-23 )



P-Channel



Super high density cell design for extremely low

RDS (ON)



Exceptional on-resistance and maximum DC

current capability



SOT-23 package design

PART MARKING